S16765-01MS Infrared Photoelectric Sensor

General Information:

• Product Name: Silicon photodiode S16765 - 01MS
• Brand: Hamamatsu Photonics
• Package Specification: Plastic package
• Category: Silicon (Si) photodiode
• Application Range: Visible to near - infrared range

Performance Parameters:

• Photosensitive Area: 2.8 × 2.4 mm
• Number of Pixels: 1
• Cooling Method: Non - cooled type
• Spectral Response Range: 320 - 1000 nm
• Peak Sensitivity Wavelength (Typical Value): 720 nm
• Photosensitivity (Typical Value): 0.4 A/W
• Dark Current (Maximum Value): 20 pA
• Rise Time (Typical Value): 0.5 μs
• Junction Capacitance (Typical Value): 200 pF
• Measurement Conditions: Ta = 25°C, typical value. Photosensitivity: λ = λp. Dark current: VR = 1 V. Junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise specified.

Features:

• Low Dark Current: It can measure from low to high illuminance with high accuracy.
• Precision Packaging: The pre - molded package can prevent stray light from the side and back of the package from entering the photosensitive area, which is beneficial to improving the measurement accuracy.

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