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YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

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    Buy cheap YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands from wholesalers
     
    Buy cheap YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands from wholesalers
    • Buy cheap YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands from wholesalers
    • Buy cheap YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands from wholesalers
    • Buy cheap YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands from wholesalers

    YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

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    Brand Name : HAMAMATSU
    Model Number : S1337-66BR
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2200
    Delivery Time : 3 days
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    YJJ S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands

    Product Description:

    S1337-66BR Silicon Photodiode Is Suitable For Precision Photometry In Ultraviolet To Infrared Bands


    Features:

    Suitable for precise photometry in ultraviolet to infrared bands

    Receiving surface 5.8 × 5.8 mm

    Encapsulated ceramics

    Package category --

    Refrigeration uncooled type

    Reverse voltage (Max.) 5 V

    Spectral response range 340 to 1100 nm

    Maximum sensitivity wavelength (typical value) 960 nm

    Photosensitivity (typical value) 0.62 A/W

    Dark current (Max.) 100 pA

    Rise time (typical value) 1 μs

    Junction capacitance (typical) 380 pF

    Noise equivalent power (typical value) 1.0×10-14 W/Hz1/2

    Typical values of measurement conditions Ta=25°C, photosensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated


    Specifications:

    Spectral response range340 to 1100 nm
    Maximum sensitivity wavelength (typical value)960 nm
    Photosensitivity (typical value)0.5A /W
    Dark current (Max.)100 pA


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