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YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

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    Buy cheap YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands from wholesalers
     
    Buy cheap YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands from wholesalers
    • Buy cheap YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands from wholesalers
    • Buy cheap YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands from wholesalers
    • Buy cheap YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands from wholesalers
    • Buy cheap YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands from wholesalers

    YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

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    Brand Name : HAMAMATSU
    Model Number : S1336-18BQ
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2200
    Delivery Time : 3 days
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    YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands

    Product Description:

    S1336-18BQ Is Suitable For Precision Photometry In The Ultraviolet To Infrared Band Silicon Photodiodes Photodiodes


    Features:

    Suitable for precise photometry in ultraviolet to near-infrared bands

    peculiarity

    - High sensitivity in UV band

    - Low capacitance

    - High reliability

    Receiving surface 1.1 × 1.1 mm

    Encapsulation metal

    Package category TO-18

    Refrigeration uncooled type

    Reverse voltage (Max.) 5 V

    Spectral response range 190 to 1100 nm

    Maximum sensitivity wavelength (typical value) 960 nm

    Photosensitivity (typical value) 0.5A /W

    Dark current (Max.) 20 pA

    Rise time (typical value) 0.1μs

    Junction capacitance (typical) 20 pF

    Noise equivalent power (typical value) 5.7×10-15 W/Hz1/2

    Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

    Sensitivity: λ = 960 nm, dark current: VR = 10 mV, junction capacitance: VR = 0 V, f = 10 kHz


    Specifications:

    Spectral response range190 to 1100 nm
    Maximum sensitivity wavelength (typical value)960 nm
    Photosensitivity (typical value)0.5A /W
    Dark current (Max.)20 pA


    Quality YJJ S1336-18BQ Silicon Photodiode 1.1 × 1.1 mm Receiving Surface for Precision Photometry in UV to Near-Infrared Bands for sale
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