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YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

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    Buy cheap YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band from wholesalers
     
    Buy cheap YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band from wholesalers
    • Buy cheap YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band from wholesalers
    • Buy cheap YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band from wholesalers
    • Buy cheap YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band from wholesalers
    • Buy cheap YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band from wholesalers
    • Buy cheap YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band from wholesalers

    YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

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    Brand Name : HAMAMATSU
    Model Number : S6931-01
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2200
    Delivery Time : 3 days
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    YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band

    Product Description:

    S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band


    Features:

    Silicon photodiode molded into a transparent plastic package

    peculiarity

    - Visible to near infrared band (suppressed infrared sensitivity type)

    Detailed parameter

    Receiving surface 2.4 × 2.8 mm

    Encapsulation plastic

    Package category --

    Heat dissipation uncooled type

    Reverse voltage (Max.) 10 V

    Sensitivity wavelength range 320 to 1000 nm

    Maximum sensitivity wavelength (typical value) 720 nm

    Photosensitivity (typical value) 0.48 A/W

    Dark current (Max.) 20 pA

    Rise time (typical value) 0.5μs

    Junction capacitance (typical value) 200 pF

    Typical values of measurement conditions Ta=25°C, photosensitivity: λ = λp, dark current: VR = 1 V, junction capacitance: VR = 0 V, f = 10 kHz, unless otherwise stated

    Spectral sensitivity characteristic


    Specifications:

    Photosensitivity (typical value)0.48 A/W
    Dark current (Max.)20 pA
    Rise time (typical value)0.5μs
    Junction capacitance (typical value)200 pF


    Quality YJJ S6931-01 Silicon Photodiode In Transparent Plastic Package In Visible To near-Infrared Band for sale
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