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YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment

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    Buy cheap YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment from wholesalers
     
    Buy cheap YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment from wholesalers
    • Buy cheap YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment from wholesalers
    • Buy cheap YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment from wholesalers
    • Buy cheap YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment from wholesalers
    • Buy cheap YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment from wholesalers
    • Buy cheap YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment from wholesalers

    YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment

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    Brand Name : HAMAMATSU
    Model Number : S4349
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2200
    Delivery Time : 3 days
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    YJJ S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment

    Product Description:

    S4349 Four-pixel Silicon PIN Photodiode Array Is Used For Laser Beam Alignment


    Features:

    Four pixel silicon PIN photodiode

    The S4349 is a four-pixel silicon PIN photodiode with sensitivity in the ultraviolet to near-infrared spectrum. The four-pixel format supports position sensing, for example for laser beam alignment.

    peculiarity

    - Four (2 × 2) pixel format

    - Low crosstalk: maximum 2%

    - Wide spectral response range: 190 to 1000 nm

    - High-speed response: fc = 20 MHz

    -TO-5 metal package

    The number of pixels is 4 segments

    Encapsulation metal

    Package category TO-5

    Refrigeration uncooled type

    Sensitivity wavelength range 190 to 1000 nm

    Maximum sensitivity wavelength (typical value) 720 nm

    Photosensitivity (typical value) 0.45A /W

    Dark current (Max.) 200 pA

    Cut-off frequency (typical value) 20 MHz

    Junction capacitance (typical) 25 pF

    Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

    For each pixel (except the light-receiving surface), sensitivity: λ = λp, dark current: VR = 5V, cut-off frequency: VR = 5V, junction capacitance: VR = 5V, f = 1MHz


    Specifications:

    Photosensitivity (typical value)0.45A/W
    Dark current (Max.)200 pA
    Rise time (typical value)2μs
    Junction capacitance (typical value)25 pF


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