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YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package

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    Buy cheap YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package from wholesalers
     
    Buy cheap YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package from wholesalers
    • Buy cheap YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package from wholesalers
    • Buy cheap YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package from wholesalers
    • Buy cheap YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package from wholesalers
    • Buy cheap YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package from wholesalers

    YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package

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    Brand Name : HAMAMATSU
    Model Number : S12060-02
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2200
    Delivery Time : 3 days
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    YJJ S12060-02 Silicon APD Low Temperature Coefficient for 800 nm Band in Metal Encapsulation and TO18 Package

    Product Description:

    S12060-02 Silicon APD Low Temperature Coefficient For 800 nm Band


    Features:

    Low temperature coefficient for 800 nm band

    This is an 800 nm near-infrared silicon APD for stable operation over a wide temperature range. This is suitable for applications such as light wave distance meters and spatial light transmission (free space optics).

    peculiarity

    - Breakdown voltage temperature coefficient: 0.4V /°C

    - High speed response

    - High sensitivity and low noise

    Type Near infrared type

    (Low temperature coefficient)

    Receiving surface φ1mm

    Encapsulation metal

    Package category TO-18

    Maximum sensitivity wavelength (typical value) 800 nm

    Sensitivity wavelength range 400 to 1000 nm

    Photosensitivity (typical value) 0.5A /W

    Dark current (Max.) 2 nA

    Cut-off frequency (typical value) 600 MHz

    Junction capacitance (typical) 6 pF

    Breakdown voltage (typical value) 200 V

    Breakdown voltage temperature coefficient (typical value) 0.4 V/°C

    Gain rate (typical value) 100

    Measurement conditions Typical value Ta = 25°C, unless otherwise stated,

    Sensitivity: λ = 800 nm, M = 1


    Specifications:

    Reverse voltage (Max.)5 V
    Spectral response range400 to 1000 nm
    Maximum sensitivity wavelength (typical value)800 nm
    Photosensitivity (typical value)0.5A /W


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