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YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode

ShenzhenYijiajie Electronic Co., Ltd.
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    Buy cheap YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode from wholesalers
     
    Buy cheap YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode from wholesalers
    • Buy cheap YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode from wholesalers
    • Buy cheap YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode from wholesalers
    • Buy cheap YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode from wholesalers

    YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode

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    Brand Name : HAMAMATSU
    Model Number : G12180-010A
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2200
    Delivery Time : 3 days
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    YJJ G12180-010A Indium Gallium Arsenic PIN Photodiode

    Product Description:

    G12180-010A Indium Gallium Arsenic PIN Photodiode


    Features:

    peculiarity

    - Low noise, low dark current

    - Low junction capacitance

    - Receiving surface: φ1mm

    - Low noise

    Receiving surface φ1.0mm

    Number of pixels 1

    Encapsulation metal

    Package category TO-18

    Heat dissipation uncooled type

    Sensitivity wavelength range 0.9 to 1.7 μm

    Maximum sensitivity wavelength (typical value) 1.55 μm

    Photosensitivity (typical value) 1.1 A/W

    Dark current (Max.) 4 nA

    Cut-off frequency (typical value) 60 MHz

    Junction capacitance (typical) 55 pF

    Noise equivalent power (typical value) 1.4×10-14 W/Hz1/2

    Typical value of measurement conditions Tc = 25°C, unless otherwise stated, sensitivity: λ = λp, dark current: VR = 5V, cutoff frequency: VR = 5V, RL = 50Ω, -3 dB, junction capacitance: VR = 5V, f = 1MHz


    Specifications:

    CoolinUncooled
    Spectral response range0.9 to 1.7 μm
    Peak wavelength (typical value)1.55 μm
    Light sensitivity (typical value)0.9A /W


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