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YJJ S3071 large Area High Speed Silicon PIN Photodiode

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    Buy cheap YJJ S3071 large Area High Speed Silicon PIN Photodiode from wholesalers
     
    Buy cheap YJJ S3071 large Area High Speed Silicon PIN Photodiode from wholesalers
    • Buy cheap YJJ S3071 large Area High Speed Silicon PIN Photodiode from wholesalers
    • Buy cheap YJJ S3071 large Area High Speed Silicon PIN Photodiode from wholesalers
    • Buy cheap YJJ S3071 large Area High Speed Silicon PIN Photodiode from wholesalers
    • Buy cheap YJJ S3071 large Area High Speed Silicon PIN Photodiode from wholesalers
    • Buy cheap YJJ S3071 large Area High Speed Silicon PIN Photodiode from wholesalers
    • Buy cheap YJJ S3071 large Area High Speed Silicon PIN Photodiode from wholesalers

    YJJ S3071 large Area High Speed Silicon PIN Photodiode

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    Brand Name : HAMAMATSU
    Model Number : S3071
    Payment Terms : L/C, D/A, D/P, T/T, Western Union, MoneyGram
    Supply Ability : 2200
    Delivery Time : 3 days
    • Product Details
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    YJJ S3071 large Area High Speed Silicon PIN Photodiode

    Product Description:

    S3071 large Area High Speed Silicon PIN Photodiode


    Features:

    Large area high speed silicon PIN photodiode

    The S3071 is a silicon PIN photodiode with a relatively large light-receiving surface, but provides excellent frequency response at 40 MHz. This photodiode is suitable for spatial light transmission (free space optical elements) and high-speed pulsed light detection.

    peculiarity

    - Receiving surface size: φ5.0mm

    - Cut-off frequency: 40 MHz (VR=24 V)

    - High reliability: TO-8 metal package

    Receiving surface φ5.0mm
    Encapsulation metal
    Package category TO-8
    Refrigeration uncooled type
    Reverse voltage (Max.) 50 V
    Spectral response range 320 to 1060 nm
    Maximum sensitivity wavelength (typical value) 920 nm
    Photosensitivity (typical value) 0.54 A/W
    Dark current (Max.) 10000 pA
    Cut-off frequency (typical value) 40 MHz
    Junction capacitance (typical) 18 pF
    Noise equivalent power (typical value) 2.1×10-14 W/Hz1/2
    Measurement conditions Ta = 25°C, typical value, sensitivity: λ = 780 nm, dark current: VR = 24 V, cutoff frequency: VR = 24 V, junction capacitance: VR = 24 V, f = 1 MHz, λ = λp, noise equivalent power: VR = 24 V, λ = λp, unless otherwise noted

    Specifications:

    Reverse voltage (Max.)50 V
    Spectral response range320 to 1060 nm
    Maximum sensitivity wavelength (typical value)920 nm
    Photosensitivity (typical value)0.54 A/W


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